译：SJ/T 1831-2016 Detailed specification for 3DK28 type NPN silicon small power switching transistor in semiconductor discrete devices

译：SJ/T 1838-2016 Detailed specification of the 3DK29 type NPN silicon small power switching transistor for semiconductor discrete devices

译：SJ/T 1833-2016 Detailed specification of NPN silicon small power switching transistor model 3DK103 in semiconductor discrete devices

译：SJ/T 1834-2016 Detailed specification of NPN silicon small power switching transistor 3DK104 type semiconductor discrete device

译：SJ/T 1839-2016 Detailed specification of the 3DK108 type NPN silicon small power switching transistor in semiconductor discrete devices

译：SJ/T 1477-2016

译：GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT)

译：GB/T 6217-1998 Semiconductor devices-Discrete devices Part 7:Bipolar transistors Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification

译：GB/T 7576-1998 Semiconductor devices—Discrete devices Part 7:Bipolar transistors Section Four—Blank detail specification for case-rated bipolar transistors for high-frequency amplification

译：GB/T 6219-1998 Semiconductor devices-Discrete devices Part 8:Field-effect transistors Section One-Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz

译：SJ/T 10962-1996 Detail specification for electronic components--Silicon NPN ambient-rated bipolar transistors for high frequency amplification,Type 3DA1514(Applicable for certification)

译：SJ/T 10965-1996 Detail specification for electronic components--Silicon PNP case-rated bipolar transistors for low frequency amplification,Type 3CD546(Applicable for certification)

译：SJ/T 10836-1996 Detail specification for electronic components--Bipolar transistors for switching application,Type 3DK107A,3DK107B (Applicable for certification)

译：SJ/T 10964-1996 Detail specification for electronic components--Silicon NPN case-rated bipolar transistors for low frequency amplification,Type 3DD401(Applicable for certification)

译：SJ/T 10791-1996 Detail specification for electronic components-- Ambient-rated bipolar transistors for low and high-frequency amplification, Type 3CX201A, 3CX201B, 3CX201C (Applicable for certific

译：SJ/T 10971-1996 Detail specification for electronic components--Silicon NPN low-frequency amplification transistor case-rated, Type 3DD204 (Applicable for certification)

译：SJ/T 10792-1996 Detail specification for electronic components-- Ambient-rated bipolar transistors for low and high-frequency amplification, Type 3DX201A, 3DX201B, 3DX201C (Applicable for certific

译：SJ/T 11060-1996 Detail specification for electronic components--Bipolar transistor for ambient-rated high-frequency amplification,Type 3DG3130 (Applicable for certification)

译：SJ/T 10974-1996 Detail specification for electronic components--Silicon NPN ambient-rated bipolar transistors for low-frequency amplification,Type 3DD325 (Applicable for certification)

译：SJ/T 10968-1996 Detail specification for electronic components--Silicon NPN low-frequency amplification transistor case-rated,Type 3DD205A (Applicable for certification)