GB/T 44924-2024 半导体集成电路 射频发射器/接收器测试方法

ICS31.200

CCSL56

中华人民共和国国家标准

GB/T44924—2024

半导体集成电路

射频发射器/接收器测试方法

Semiconductorintegratedcircuits—

MeasuringmethodsforRFtransmitter/receiver

2024⁃12⁃31发布2025⁃04⁃01实施

国家市场监督管理总局

国家标准化管理委员会发布

GB/T44924—2024

目次

前言··························································································································Ⅲ

1范围·······················································································································1

2规范性引用文件········································································································1

3术语和定义··············································································································1

4一般要求·················································································································4

4.1总则·················································································································4

4.2环境要求···········································································································4

4.3测试条件···········································································································4

4.4测试系统及仪器设备····························································································4

4.5测试注意事项·····································································································5

5详细要求·················································································································5

5.1mW5

动态功耗P（a）································································································

5.2dB6

功率增益G（P）·································································································

5.3ΔdB10

功率增益平坦度G（P）····················································································

5.4dB11

线性功率增益GPLIN（）·······················································································

5.5ΔdB11

线性功率增益平坦度GPLIN（）···········································································

5.6dBm12

输出功率P（o）·····························································································

5.7dBm13

抗烧毁功率PKSH（）························································································

5.8效率η（%）········································································································14

5.9功率增益可调范围GR（dB）··················································································15

5.10dBc16

镜像抑制比RIMJ（）························································································

5.11dBc17

谐波抑制比RHR（）························································································

5.12dBc18

本振抑制比RLO（）························································································

5.13dBc19

边带抑制比RSB（）·························································································

5.14dB20

杂散抑制比RFS（）··························································································

5.15PNdBdBm21

_压缩点CP⁃N（）··················································································

5.16输出二阶互调截止点OIP2（dBm）·········································································23

5.17输入二阶互调截止点IIP2（dBm）··········································································26

5.18输出三阶互调截止点OIP3（dBm）·········································································26

5.19输入三阶互调截止点IIP3（dBm）··········································································28

5.20ns29

通道建立时间tON（）·························································································

5.21ns30

通道关断时间tOFF（）························································································

5.2231

收发切换时间tTR······························································································

Ⅰ

GB/T44924—2024

5.23噪声系数NF（dB）·····························································································34

5.24端口回波损耗RL（dB）/电压驻波比VSWR·····························································37

5.25端口阻抗Z（Ω）·································································································40

5.26ns41

群时延tGD（）··································································································

5.27带内相位非线性PNL（°）·····················································································42

5.28dBm/Hz43

噪声基底NFL（）·····················································································

5.29本振泄漏LOL（dBm）························································································44

5.30∆dB45

幅度稳定度AP（o）·······················································································

5.31相位稳定度Δθ（°）·····························································································46

5.32°47

通道间相位一致性PSER（）··················································································

5.33dB50

通道间幅度一致性AMER（）··············································································

5.34I/Q°51

相位误差PEIQ（）························································································

5.35I/QdB53

幅度误差AEIQ（）·····················································································

5.36调制精度EVM（%）···························································································54

5.37邻信道功率抑制比ACPR（dB）·············································································55

5.38dB56

通道隔离度KISO（）·························································································

5.39载波泄露CL（dB）·····························································································58

Ⅱ

GB/T44924—2024

前言

本文件按照GB/T1.1—2020《标准化工作导则第1部分：标准化文件的结构和起草规则》的规

定起草。

请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。

本文件由中华人民共和国工业和信息化部提出。

本文件由全国集成电路标准化技术委员会（SAC/TC599）归口。

本文件起草单位：中国电子科技集团公司第二十四研究所、重庆西南集成电路设计有限责任公司、

中国电子科技集团公司第十四研究所、中国电子科技集团公司第三十八研究所、成都振芯科技股份有

限公司、深圳市晶峰晶体科技有限公司。

本文件主要起草人：苏良勇、王露、唐景磊、阳润、戚园、刘丹、许娟、苏巧、陈翔、刘晓政、范超、高青。

Ⅲ

GB/T44924—2024

半导体集成电路

射频发射器/接收器测试方法

1范围

本文件规定了半导体集成电路射频发射器和接收器（以下简称器件）的电特性测试方法的基本原

理和测试程序。

本文件适用于具有接收功能、发射功能、收发一体功能的一次变频射频发射器/接收器，其他类型

的发射器和接收器可参考使用。

2规范性引用文件

下列文件中的内容通过文中的规范性引用而构成本文件必不可少的条款。其中，注日期的引用文

件，仅该日期对应的版本适用于本文件；不注日期的引用文件，其最新版本（包括所有的修改单）适用于

本文件。

GB/T4937.1—2006半导体器件机械和气候试验方法第1部分：总则

GB/T9178集成电路术语

3术语和定义

GB/T9178界定的以及下列术语和定义适用于本文件。

3.1

动态功耗dynamicpowerconsumption

器件输入端有激励信号且输出端有负载工作时，所消耗的总功率。

3.2

功率增益gain

器件工作在规定的输入/输出功率条件下，输出功率与输入功率的比值。

3.3

功率增益平坦度gainflatness

器件在规定的频率范围内和规定的输入/输出功率条件下，最大功率增益与最小功率增益的差值。

3.4

线性功率增益lineargain

器件工作在输出功率变化量和输入功率变化量相同的区域，输出功率与输入功率的比值。

3.5

线性功率增益平坦度lineargainflatness

器件在规定的频率范围内，在输出功率变化量和输入功率变化量相同的区域，最大线性功率增益

与最小线性功率增益的差值。

3.6

输出功率outputpower

器件在规定的输入功率条件下，测得的输出功率。

1