译：GB/T 13151-2005 Semiconductor devices—Discrete devices—Part 6:thyristors—Section three—Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A

译：GB/T 13150-2005 Semiconductor devices—Discrete devices—Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A

译：GB/T 8446.3-2004 Heat sink for power semiconductor device—Part 3:Insulators and fasteners

译：GB/T 8446.2-2004 Heat sink for power semiconductor device—Part 2:Measuring method of thermal resistance and input fluid-output fluid pressure difference

译：GB/T 8446.1-2004 Heat sink for power semiconductor device—Part 1:Casting kind series

译：GB/T 6589-2002 Semiconductor devices—discrete devices—Part 3-2:Signal (including switching) and regulator diodes—blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)

译：GB/T 11499-2001 Letter symbols for discrete semiconductor devices

译：GB/T 6588-2000 Semiconductor devices—Discrete devices—Part 3:Signal(including switching) and regulator diodes Section One—Blank detail specification for signal diodes,switching diodes and controlled-avalanche diodes

译：GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices

译：GB/T 6352-1998 Semiconductor devices Discrete devices Part 6:Thyristors Section One-Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A

译：GB/T 6351-1998 Semiconductor devices Discrete devices Part 2:Rectifier diodes Section One-Blank detail specification for rectifier diodes(including avalanche recti-fier diodes), ambient and case-rated,up to 100A

译：GB/T 6590-1998 Semiconductor device-Discrete devices—Part 6:Thyristors Section Two-Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A

译：GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General

译：GB/T 6217-1998 Semiconductor devices-Discrete devices Part 7:Bipolar transistors Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification

译：GB/T 7576-1998 Semiconductor devices—Discrete devices Part 7:Bipolar transistors Section Four—Blank detail specification for case-rated bipolar transistors for high-frequency amplification

译：GB/T 6219-1998 Semiconductor devices-Discrete devices Part 8:Field-effect transistors Section One-Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz

译：GB/T 4023-1997 Semiconductor devices—Discrete devices and integrated circuits—Part 2:Rectifier diodes

译：GB/T 17007-1997 Measuring methods for insulated-gate bipolar transistor

译：GB/T 17008-1997 Terminology and letter symbols for insulated-gate bipolar transistor

译：GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100A