GB/T 17940.1-2026 半导体器件 集成电路 第3-1部分：模拟集成电路 单片集成运算放大器空白详细规范

ICS31.200

CCSL56

中华人民共和国国家标准

GB/T17940.1—2026

代替GB/T9425—1988

半导体器件集成电路

第3⁃1部分：模拟集成电路

单片集成运算放大器空白详细规范

Semiconductordevices—Integratedcircuits—

Part3⁃1：Analogueintegratedcircuits—Blankdetailspecificationfor

monolithicintegratedoperationalamplifiers

（IEC60748⁃3⁃1：1991，Semiconductordevices—Integratedcircuits—

Part3：Analogueintegratedcircuits—Sectionone：Blankdetailspecification

formonolithicintegratedoperationalamplifiers，MOD）

2026⁃10⁃30发布2027⁃05⁃01实施

国家市场监督管理总局

国家标准化管理委员会发布

GB/T17940.1—2026

目次

前言··························································································································Ⅲ

引言··························································································································Ⅴ

1范围·······················································································································1

2规范性引用文件········································································································1

3术语和定义··············································································································1

4标志和订货资料········································································································2

4.1标志·················································································································2

4.2订货资料···········································································································2

5应用说明·················································································································2

6功能的详细说明········································································································2

7极限值（绝对最大额定值体系）······················································································2

8工作条件（适用于整个工作温度范围）·············································································3

9电特性····················································································································3

9.1通用要求···········································································································3

9.2静态特性···········································································································3

9.3动态特性···········································································································4

10编程·····················································································································5

11机械和环境的额定值、特性和数据················································································5

12附加资料···············································································································5

12.1通则················································································································5

12.2框图················································································································5

12.3输出负载电容····································································································5

12.4温度和输入和/或输出负载的影响··········································································5

12.5操作警示··········································································································5

13筛选·····················································································································5

14质量评定程序·········································································································6

14.1通则················································································································6

14.2鉴定批准程序····································································································6

14.3能力批准程序····································································································6

15结构相似程序·········································································································6

16试验条件和检验要求································································································6

16.1通则················································································································6

16.2抽样方案和检验批构成························································································6

Ⅰ

GB/T17940.1—2026

16.3检验能力··········································································································6

16.4延期交货········································································································10

17附加测量方法········································································································10

Ⅱ

GB/T17940.1—2026

前言

本文件按照GB/T1.1—2020《标准化工作导则第1部分：标准化文件的结构和起草规则》的规定

起草。

本文件是国家标准《半导体器件集成电路》中“模拟集成电路”的第1部分。《半导体器件集成

电路》中的“模拟集成电路”已经发布了以下部分：

——半导体器件集成电路第3部分：模拟集成电路（GB/T17940—2000）；

——半导体器件集成电路第3⁃1部分：模拟集成电路单片集成运算放大器空白详细规范

（GB/T17940.1—2026）。

本文件代替GB/T9425—1988《半导体集成电路运算放大器空白详细规范（可供认证用）》，与

GB/T9425—1988相比，除结构调整和编辑性改动外，主要技术变化如下：

a）更改了“极限值”的相关内容（见第7章，GB/T9425—1988的4.1~4.8）；

b）删除了“电特性”表格中的“试验”栏（见GB/T9425—1988的第6章）；

c）增加了“筛选”（见第13章）；

d）增加了“质量评定程序”（见第14章）；

e）增加了“结构相似程序”（见第15章）。

本文件修改采用IEC60748⁃3⁃1：1991《半导体器件集成电路第3部分：模拟集成电路第一

篇：单片集成运算放大器空白详细规范》。

本文件与IEC60748⁃3⁃1：1991相比，做了下述结构调整：

——增加了“范围”“规范性引用文件”和“术语和定义”三章，后续章号顺延；

——“引言”中增加了表号，后续表号顺延；

——删除了第8章中无内容的章条；

——增加了9.1通用要求，后续章条号顺延；

——增加了12.1通则、14.1通则、16.1通则，后续章条号顺延。

本文件与IEC60748⁃3⁃1：1991的技术差异及其原因如下：

——用规范性引用的GB/T4589.1—2006替换了IEC60747⁃10（见4.1、第14章、第16章）、

GB/T12750—2006替换了IEC60748⁃11（见4.2、第11章、第13章、第14章、第15章、第16章）、

GB/T2423.23—2013替换了IEC60068⁃2⁃17（见16.3）、GB/T4937.8替换了IEC60749⁃8

（见16.3）、GB/T4937.11替换了IEC60749⁃11（见16.3）、GB/T4937.14替换了IEC60749⁃14

（见16.3）、GB/T4937.15替换了IEC60749⁃15（见16.3）、GB/T4937.21替换了IEC60749⁃21

（见16.3）、IEC60749⁃5替换了IEC60749（见16.3）、增加了规范性引用的GB/T17940—

2000（见9.3），以符合我国实际情况；

——将国际电工委员会电子元器件质量评定体系（IECQ）更改为中国电子元器件质量评定体系

（CQCQ）（见4.2），以符合我国实际情况；

——将表7中C12分组瞬态能量引用标准栏考虑中更改为相关标准，以符合我国实际情况；

——删除了涉及QC001002的内容（见IEC60748⁃3⁃1：1991的13.1），本文件以国家标准为执行

总规范，不涉及国际标准体系。

本文件做了下列编辑性改动：

——为与现有标准协调，将标准名称改为《半导体器件集成电路第3⁃1部分：模拟集成电路单

片集成运算放大器空白详细规范》；

Ⅲ

GB/T17940.1—2026

——将表2、表3、表4和表8中的注和*改为脚注并重新编号；

——表2、表3增加了注。

请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。

本文件由中华人民共和国工业和信息化部提出。

本文件由全国集成电路标准化技术委员会（SAC/TC599）归口。

本文件起草单位：中国电子技术标准化研究院、中国电子科技集团公司第二十四研究所、清华

大学、厦门优讯芯片股份有限公司、贵州振华风光半导体股份有限公司、珠海市杰理科技股份有限

公司、长沙韶光半导体有限公司、韬润半导体（北京）股份有限公司、中显光电科技（浙江）有限公司。

本文件主要起草人：李锟、刘锐、吴华强、林智、陈潇、张启明、何晓宇、周立人、马玥、刘金龙。

本文件及其所代替文件的历次版本发布情况为：

——1988年首次发布为GB/T9425—1988；

——本次为第一次修订，标准编号调整为GB/T17940.1—2026。

Ⅳ

GB/T17940.1—2026

引言

0.1概述

GB/T17940《半导体器件集成电路第3部分：模拟集成电路》各部分按模拟集成电路的功能

类型、产品族及具体器件细分，相互配套、层级衔接、术语与规则统一，目的在于统一国内模拟集成电路

的术语、符号、参数、测试方法与质量评定规则，拟由以下2个部分构成。

——半导体器件集成电路第3部分：模拟集成电路。目的在于确立模拟集成电路技术框架，

统一模拟集成电路通用术语、符号、参数、基础测试与质量评定通用规则。

——半导体器件集成电路第3⁃1部分：模拟集成电路单片集成运算放大器空白详细规范。

目的在于制定单片集成运算放大器专用空白规范模板，统一该类器件技术指标、测试及质量

验收细则，规范各单片集成运算放大器详细规范的编制。

本文件是半导体器件模拟集成电路空白详细规范系列文件之一，与GB/T4589.1—2006配套

使用。

0.2要求的资料

下列[1]~[9]项要求的内容与表1中各栏资料相对应，这些资料填入本文件相应的栏中。

0.3详细规范的识别

[1]授权发布详细规范的国家标准机构名称。

[2]详细规范的中国电子元器件质量评定体系（CQCQ）编号。

[3]总规范和分规范的编号及版本号。

[4]详细规范的国家编号、发布日期及国家标准体系要求的其他资料。

0.4器件的识别

[5]主要功能和型号。如单片集成运算放大器集成电路68000等。

[6]典型结构和应用资料。如果器件设计是多用途的，在详细规范中说明。这些用途对器件所要

求的特性、极限值和检验均需得到满足。

[7]外形图、引出端识别、标志和/或有关外形的参考文件。

[8]按GB/T4589.1—2006中2.6的质量评定类别。

[9]参考数据。

[方括号内的条款为详细规范编写者提供指导，不纳入正式的详细规范中。]

[若条款本身与产品详细规范的编制说明可能产生混淆，则该条款置于方括号内，以示区分。]

Ⅴ

GB/T17940.1—2026

表1资料填写要求

[国家代表机构（NAI）[1][详细规范的CQCQ编号、版本号和/或日期][2]

（和可能提供规范的团体）名称（地址）]

评定电子元器件质量的依据[3][详细规范的国家编号][4]

总规范：[若国家编号CQCQ和编号一致，本栏不需要填]

GB/T4589.1—2006

分规范：

GB/T12750—2006

[及编号不同时的国家编号]

单片集成运算放大器空白详细规范[5]

[相关器件的型号]

订货资料：

机械说明[7]简要说明[6]

外形依据：应用：见第5章

[宜给出标准封装资料，IEC编号（如有，则需遵循）和/或功能：见第6章

国家编号]典型结构：[硅、单片、双极、MOS（金属⁃氧化物⁃半导体）]

外形图：[可在第11章中提供更详细的说明]封装：[空封或非空封]

引出端识别：[派生产品的特性对照表]

[画出引出端排列图，包括图形符号]注意：静电敏感器件（适用时）

[]

标志：字母和图形，或色码质量评定类别[8]

[]

详细规范应规定器件上标志的内容（如有）[按GB/T4589.1—2006中2.6]

[按GB/T4589.1—2006中2.5或本文件的4.1]

参考数据[9]

[在各型号间比较的最重要性能的参考数据]

按本文件鉴定合格的器件，其有关承制方的资料在现行合格产品目录中是可获取的

Ⅵ

GB/T17940.1—2026

半导体器件集成电路

第3⁃1部分：模拟集成电路

单片集成运算放大器空白详细规范

1范围

本文件规定了单片集成运算放大器详细规范的格式和要求。

本文件适用于评定单片集成运算放大器详细规范的编写。

2规范性引用文件

下列文件中的内容通过文中的规范性引用而构成本文件必不可少的条款。其中，注日期的引用文

件，仅该日期对应的版本适用于本文件；不注日期的引用文件，其最新版本（包括所有的修改单）适用于

本文件。

GB/T2423.23—2013环境试验第2部分：试验方法试验Q：密封（IEC60068⁃2⁃17：1994，

IDT）

GB/T4589.1—2006半导体器件第10部分：分立器件和集成电路总规范（IEC60747⁃10：

1991，IDT）

GB/T4937.8半导体器件机械和气候试验方法第8部分：密封（GB/T4937.8—2025，

IEC60749⁃8：2002，IDT）

GB/T4937.11半导体器件机械和气候试验方法第11部分：快速温度变化双液槽法

（GB/T4937.11—2018，IEC60749⁃11：2002，IDT）

GB/T4937.14半导体器件机械和气候试验方法第14部分：引出端强度（引线牢固性）

（GB/T4937.14—2018，IEC60749⁃14：2003，IDT）

GB/T4937.15半导体器件机械和气候试验方法第15部分：通孔安装器件的耐焊接热

（GB/T4937.15—2018，IEC60749⁃15：2010，IDT）

GB/T4937.21半导体器件机械和气候试验方法第21部分：可焊性（GB/T4937.21—2018，

IEC60749⁃21：2011，IDT）

GB/T12750—2006半导体器件集成电路第11部分：半导体集成电路分规范（不包括混合

电路）（IEC60748⁃11：1990，IDT）

GB/T17940—2000半导体器件集成电路第3部分：模拟集成电路（IEC60748⁃3：1986，

IDT）

IEC60749⁃5半导体器件气候试验方法第5部分：稳态温湿度偏置寿命试验（Semiconductor

devices—Mechanicalandclimatictestmethods—Part5：Steady⁃statetemperaturehumiditybiaslifetest）

3术语和定义

本文件没有需要界定的术语和定义。

1