GB/T 20870.6-2026 半导体器件 第16-6部分：微波集成电路 倍频器

ICS31.200

CCSL56

中华人民共和国国家标准

GB/T20870.6—2026/IEC60747⁃16⁃6：2019

半导体器件

第16⁃6部分：微波集成电路倍频器

Semicondutordevices—

Part16⁃6：Microwaveintegratedcircuits—Frequencymultipliers

（IEC60747⁃16⁃6：2019，IDT）

2026⁃08⁃28发布2027⁃03⁃01实施

国家市场监督管理总局

国家标准化管理委员会发布

GB/T20870.6—2026/IEC60747⁃16⁃6：2019

目次

前言··························································································································Ⅲ

引言··························································································································Ⅳ

1范围·······················································································································1

2规范性引用文件········································································································1

3术语和定义··············································································································1

4基本额定值和特性·····································································································2

4.1总体要求···········································································································2

4.2应用说明···········································································································3

4.3功能规定···········································································································3

4.4极限值（绝对最大额定值体系）················································································5

4.5工作条件（在规定工作温度范围内）··········································································6

4.6电特性··············································································································6

4.7机械与环境额定值、特性和数据···············································································7

4.8附加资料···········································································································7

5测试方法·················································································································7

5.1通则·················································································································7

5.28

输出功率（Po）······································································································

5.39

变频增益（Gc）·····································································································

5.4输入回波损耗［］··························································································10

Lret（in）

5.5输出回波损耗［L］··························································································11

re（tout）

5.6/13

基波隔离度（PoP1）·····························································································

5.7n/13

阶谐波隔离度（PoPnth）······················································································

5.8相位噪声［L(f)］································································································14

参考文献····················································································································19

Ⅰ

GB/T20870.6—2026/IEC60747⁃16⁃6：2019

前言

本文件按照GB/T1.1—2020《标准化工作导则第1部分：标准化文件的结构和起草规则》的规

定起草。

本文件是GB/T20870《半导体器件》的第6部分。GB/T20870已经发布了以下部分：

——第16⁃1部分：微波集成电路放大器；

——第16⁃2部分：微波集成电路预分频器；

——第16⁃3部分：微波集成电路变频器；

——第16⁃4部分：微波集成电路开关；

——第16⁃5部分：微波集成电路振荡器；

——第16⁃6部分：微波集成电路倍频器；

——第16⁃7部分：微波集成电路衰减器；

——第16⁃10部分：单片微波集成电路技术可接收程序。

本文件等同采用IEC60747⁃16⁃6：2019《半导体器件第16⁃6部分：微波集成电路倍频器》。

本文件做了下列最小限度的编辑性改动：

——增加了3.3变频增益、3.6基波隔离度、3.7n阶谐波隔离度的注，以解释说明不同常用单位下

该术语的计算方式。

请注意本文件的某些内容可能涉及专利。本文件的发布机构不承担识别专利的责任。

本文件由中华人民共和国工业和信息化部提出。

本文件由全国集成电路标准化技术委员会（SAC/TC599）归口。

本文件起草单位：中电国基北方有限公司、中国电子科技集团公司第十三研究所、哈尔滨工业大

学、博信通信股份有限公司、济南晶芯半导体有限公司、石家庄宇讯电子有限公司、河北博威集成电路

有限公司、河北新华北集成电路有限公司、合肥芯谷微电子股份有限公司、河北中瓷电子科技股份有限

公司、中国电子技术标准化研究院、北京华航无线电测量研究所、河北北芯半导体科技有限公司。

本文件主要起草人：马康健、刘牧荑、吴少川、侯文卷、王琮、吴禹、庞建凯、于长江、任晓伟、齐步坤、

李军、钟鑫、张秋、刘达、桂明洋、尹丽晶。

Ⅲ

GB/T20870.6—2026/IEC60747⁃16⁃6：2019

引言

半导体器件是电子行业产业链中的通用基础产品，为电子系统中的最基本单元，GB/T20870《半

导体器件》为微波集成电路产品系列标准，是微波集成电路进行研制生产和检验的基础性和通用性标

准，对于评价和考核微波集成电路的质量和可靠性起着重要作用，拟由11个部分构成。

——第16⁃1部分：微波集成电路放大器。目的在于规定微波集成电路放大器的术语、基本额定

值、特性以及测试方法。

——第16⁃2部分：微波集成电路预分频器。目的在于规定微波集成电路预分频器的术语、字母

符号、基本额定值、特性以及测试方法。

——第16⁃3部分：微波集成电路变频器。目的在于规定微波集成电路变频器的术语、基本额定

值、特性以及测试方法。

——第16⁃4部分：微波集成电路开关。目的在于规定微波集成电路开关的术语、基本额定值、

特性以及测试方法。

——第16⁃5部分：微波集成电路振荡器。目的在于规定微波集成电路振荡器的术语、基本额定

值、特性以及测试方法。

——第16⁃6部分：微波集成电路倍频器。目的在于规定微波集成电路倍频器的术语、基本额定

值、特性以及测试方法。

——第16⁃7部分：微波集成电路衰减器。目的在于规定微波集成电路衰减器的术语、基本额定

值、特性以及测试方法。

——第16⁃8部分：微波集成电路限幅器。目的在于规定微波集成电路限幅器的术语、基本额定

值、特性以及测试方法。

——第16⁃9部分：微波集成电路移相器。目的在于规定微波集成电路移相器的术语、基本额定

值、特性以及测试方法。

——第16⁃10部分：单片微波集成电路技术可接收程序。目的在于规定单片集成电路的设计、制

作和交付的术语、定义、符号、质量体系、测试、评价、验证方法以及其他要求。

——第16⁃11部分：微波集成电路功率检波器。目的在于规定微波集成电路功率检波器的术

语、基本额定值、特定以及测试方法。

该系列标准等同采用IEC60747⁃16系列标准，保证微波集成电路产品标准与国际标准一致，实现

微波集成电路产品标准与国际接轨。通过制定该系列标准，统一微波集成电路产品的术语定义、基本

额定值和特性、测试方法，对微波集成电路的研究、生产、检验和使用具有重要意义，同时补充完善半导

体集成电路标准体系，为微波集成电路行业的发展起到指导作用。

Ⅳ

GB/T20870.6—2026/IEC60747⁃16⁃6：2019

半导体器件

第16⁃6部分：微波集成电路倍频器

1范围

本文件规定了微波集成电路倍频器的术语、基本额定值、特性以及测量方法。

2规范性引用文件

下列文件中的内容通过文中的规范性引用而构成本文件必不可少的条款。其中，注日期的引用文

件，仅该日期对应的版本适用于本文件；不注日期的引用文件，其最新版本（包括所有的修改单）适用于

本文件。

GB/T17573—2026半导体器件总则（IEC60747⁃1：2006，IDT）

GB/T20870.3—2026半导体器件第16⁃3部分：微波集成电路变频器（IEC60747⁃16⁃3：

2017，IDT）

IEC60617简图用图形符号（Graphicalsymbolsfordiagrams）

注：GB/T4728（所有部分）电气简图用图形符号［IEC60617（所有部分），IDT］

IEC60747⁃4半导体器件分立器件第4部分：微波二极管和晶体管（Semiconductordevices—

Discretedevices—Part4：Microwavediodesandtransistors）

注：GB/T4023.4—2026半导体分立器件第4部分：微波二极管和晶体管（IEC60747⁃4：2017，MOD）

IEC61340⁃5⁃1静电学第5⁃1部分：电子器件的静电防护通用要求（Electrostatics—Part5⁃1：

Protectionofelectronicdevicesfromelectrostaticphenomena—Generalrequirements）

注：GB/T37977.51—2023静电学第5⁃1部分：电子器件的静电防护通用要求（IEC61340⁃5⁃1：2016，IDT）

IECTR61340⁃5⁃2静电学第5⁃2部分：电子器件的静电防护用户手册（Electrostatics—Part5⁃2：

Protectionofelectronicdevicesfromelectrostaticphenomena—Userguide）

3术语和定义

下列术语和定义适用于本文件。

3.1

输出频率outputfrequency

fo

输入频率乘以倍频因子N得到的频率值，其中N为整数。

3.2

输出功率outputpower

Po

输出端口在输出频率下测量到的射频功率。

3.3

变频增益conversiongain

Gc

输出功率与输入功率的比值。

1